International audience
International audience
Undoubtedly, tourism is growing strongly worldwide, especially in developing countries and rural areas. Tourism has both positive and negative impacts on tourist destinations that link sustainable development's economic, social, and environmental components. The local community's attitude is crucial for future tourism planning, management, and...
GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits of high voltage power devices. In this work, we report on AlGaN/GaN-on-AlN...
We comparatively study the onset of photo-induced non-radiative intrinsic Auger recombination processes for red, yellow and green light emitting InGaNsingle bondGaN hetero-structures grown along the polar orientation. We find a dramatic reduction of the photo excitation densities triggering the domination of Auger effect with increasing...
The variation of the internal quantum efficiency (IQE) of single InGaN quantum well structures emitting from blue to red is studied as a function of the excitation power density and the temperature. By changing the well width, the indium content, and adding a strain compensation AlGaN layer, we could tune the intrinsic radiative recombination...
We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Yoshiya Iwata, Ryan G. Banal, Shuhei Ichikawa, Mitsuru Funato, and Yoichi Kawakami, Journal of Applied Physics 117,...
The Auger effect and its impact on the internal quantum efficiency (IQE) of yellow light emitters based on silicon-doped InGaN–AlGaN–GaN quantum wells are investigated by power dependence measurement and using an ABC model. Photoluminescence intensity recorded as a function of excitation power density follows a linear dependence up to a...
We investigate the optical properties of porous GaN films of different porosities, focusing on the behaviors of the excitonic features in time-integrated and time-resolved photoluminescence. A substantial enhancement of both excitonic emission intensity and recombination rate, along with insignificant intensity weakening under temperature rise,...
The optical properties of Al0.1Ga0.9N nanostructures grown by molecular beam epitaxy on Al0.5Ga0.5N (0001) templates are investigated. By combining morphological and photo- luminescence (PL) characterizations, we have performed an in-depth analysis of the nanostructures properties as a function of the deposited amount. It is shown that: 1) the...
In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects of reduction in the GaN channel thickness as well as the AlGaN barrier thickness and composition on structural and electrical properties of the heterostructures have...
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Time-resolved photoluminescence spectra of orange light emitting (Ga,In)N-based devices have been grown by metal-organic vapour phase epitaxy on C plane sapphire for indium compositions ranging up to 23 percents. The temperature dependent time resolved photoluminescence spectra collected through the 8K-300K range are found to exhibit behaviours...