VENNÉGUÈS , P

In this work, ammonia source molecular beam epitaxy is explored as an alternative technique to grow ScAlN/GaN Electron Mobility Transistor heterostructures. The effect of growth temperature and ScAlN barrier thickness on 2-dimensional electron gas density is investigated with capacitance-voltage measurements. A transistor with a maximum drain...

We demonstrate the growth of almost strain-free (10-11) semipolar GaN on silicon-on-insulator (SOI) substrates, with no meltbacketching and with a defect density strongly reduced compared to semipolar templates grown on patterned silicon substrates.This is carried out using SOI substrates with a very thin (∼150 nm) 6° off (001) Si top layer. By...

In this study, we investigate the diffusion of Si donors in AlN. Amorphous Si 1−x N x sputtered on the surface of bulk AlN with low dislocation density is used as a Si source. The diffusion experiments are conducted through isochronal and isothermal annealing in a protective N 2 atmosphere at temperatures between 1500°C and 1700°C. The Si depth...

Since the synthesis of graphene in 2004 [1], interest in two-dimensional (2D) materials has significantly increased, particularly focusing on transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2). These materials offer exceptional electronic, mechanical, and optical properties at the atomic scale, and their bandgap is...