With the increasing attention devoted to ZnO in the late nineties, the discovery of ZnCdO as a means of reducing its bandgap towards visible wavelengths promised it a bright future in optoelectronics, which should run in parallel to its possible applications as a transparent conducting oxide. This review will cover the developments achieved so...
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October 2017 (v1)Journal articleUploaded on: December 3, 2022
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February 2023 (v1)Journal article
We modeled by kinetic Monte Carlo simulations the growth of InGaN alloys on perfectly oriented and misoriented GaN surfaces. As the growth temperature increases, we show that two phenomena occur: composition pulling along the growth direction and lateral indium rich cluster formation. We show that both phenomena have the same origin, strain,...
Uploaded on: February 22, 2023 -
July 2020 (v1)Journal article
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December 17, 2019 (v1)Journal article
The authors present research on the electronic transport in heterostructures based on p-type nickel oxide (NiO) with the n-type oxide semiconductors zinc oxide (ZnO) and cadmium oxide (CdO). NiO is a desirable candidate for application in (opto)electronic devices. Because of its small electron affinity, heterojunctions with most n-type oxide...
Uploaded on: December 4, 2022 -
July 2020 (v1)Journal article
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Uploaded on: February 22, 2023 -
November 1, 2020 (v1)Journal article
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Uploaded on: December 3, 2022 -
July 30, 2024 (v1)Journal article
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Uploaded on: August 11, 2024 -
November 2019 (v1)Journal article
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Uploaded on: December 4, 2022 -
December 2019 (v1)Journal article
Nano-engineering III-Nitride semiconductors offers a route to further control the material and optoelectronic properties, enabling novel functionalities and applications. Although various lithography techniques are employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for...
Uploaded on: December 4, 2022 -
May 27, 2013 (v1)Conference paper
ZnO is a wide bandgap semiconductor with strong excitonic properties, in particular a large oscillator strength and a large exciton binding energy. It therefore raises a strong interest for the demonstration of polariton lasing up to room temperature with microcavities in the strong exciton-photon coupling regime. The strong coupling regime has...
Uploaded on: December 3, 2022 -
May 27, 2013 (v1)Conference paper
ZnO is a wide bandgap semiconductor with strong excitonic properties, in particular a large oscillator strength and a large exciton binding energy. It therefore raises a strong interest for the demonstration of polariton lasing up to room temperature with microcavities in the strong exciton-photon coupling regime. The strong coupling regime has...
Uploaded on: October 11, 2023