ZEGAOUI , Malek

GaN and SiC materials and their device technology have matured and become commerciallyavailable. Fundamental material properties will soon limit the performance. Consequently, a novelbreakthrough in power electronics performance requires a new generation of materials. In this frame,the so-called ultra-wide-bandgap (UWBG) materials that have...

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In this paper, AlN-based HEMTs on silicon are demonstrated using NH3-MBE. The spirit is to get the highest 2DEG density theoretically achievable in nitrides while keeping thin barrier thickness, which is mandatory to achieve high frequency performances. To do that, the strategy consists in growing a relaxed AlN ...

GaN-based planar Schottky barrier diodes with potential applications in THz frequency multipliers were fabricated and characterized. GaN is a promising candidate to overcome all the physical limitations of GaAs which have been reached in the frame of high frequency power multiplier applications. Fabrication process of GaN Schottky diodes...

This paper presents the use of a Yagi-Uda antenna on polymer substrate for 300 GHz data communications. The antenna is described and characterized in terms of radiation pattern in the 300 GHz band. Then, it is used and validated within a communication link. Using amplitude shift keying modulation at 10 Gbps and without any signal...

We report on the use of a Yagi-Uda antenna on polymer substrate used in a 306 GHz-20 Gbit/s real-time data link for indoor applications. The Yagi-Uda antenna is described and the validation of the THz link is obtained in amplitude modulation mode and using QAM-16 signals (32 Gbit/s).

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