Strain relaxation mechanisms in metal-organic vapour phase epitaxy grown (Al,Ga)N/GaN heterostructures are presented. Relaxation first occurs through a 2D–3D transition. For pure AlN, misfit a-type dislocations are introduced at the coalescence front of growth islands. For (Al,Ga)N (Al concentration≤70%), the second relaxation step is cracking....
-
2005 (v1)Book sectionUploaded on: December 4, 2022
-
March 15, 2017 (v1)Journal article
We comparatively study the onset of photo-induced non-radiative intrinsic Auger recombination processes for red, yellow and green light emitting InGaNsingle bondGaN hetero-structures grown along the polar orientation. We find a dramatic reduction of the photo excitation densities triggering the domination of Auger effect with increasing...
Uploaded on: February 28, 2023 -
2011 (v1)Journal article
For the next-generation solid state lighting, the production of high quality semipolar (112¯2) GaN layers on sapphire obtained using asymmetric epitaxial lateral overgrowth (ELO) method has been investigated. This type of ELO leads to efficient blocking of the basal stacking faults (BSFs) in the bulk, and enables the formation of nondefective...
Uploaded on: December 3, 2022 -
October 17, 2016 (v1)Journal article
The Auger effect and its impact on the internal quantum efficiency (IQE) of yellow light emitters based on silicon-doped InGaN–AlGaN–GaN quantum wells are investigated by power dependence measurement and using an ABC model. Photoluminescence intensity recorded as a function of excitation power density follows a linear dependence up to a...
Uploaded on: February 28, 2023 -
April 6, 2015 (v1)Journal article
XE examine the impact of the heterostructure design at the scale of the structural and optical properties for yellow light emission
Uploaded on: March 26, 2023 -
June 14, 2021 (v1)Conference paper
International audience
Uploaded on: December 3, 2022 -
December 2005 (v1)Journal article
A new substrate material, alumina-rich spinel, with better thermal and lattice match to GaN than sapphire, has been developed for growing high-quality GaN-based light-emitting diodes (LEDs). As 1:3 spinel (1 MgO for 3 Al2O3), MgAl6O10, is chemically close to sapphire, Al2O3, we successfully replicated on (1 1 1)-oriented spinel wafers the GaN...
Uploaded on: December 4, 2022 -
2022 (v1)Journal article
We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical, and optical investigations attest...
Uploaded on: December 3, 2022 -
2021 (v1)Journal article
International audience
Uploaded on: February 22, 2023 -
2021 (v1)Journal article
International audience
Uploaded on: December 4, 2022 -
2021 (v1)Journal article
International audience
Uploaded on: December 4, 2022 -
2021 (v1)Journal article
International audience
Uploaded on: February 22, 2023 -
November 25, 2021 (v1)Conference paper
International audience
Uploaded on: December 3, 2022 -
October 24, 2022 (v1)Conference paper
International audience
Uploaded on: December 3, 2022