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Last name: DE MIERRY
First name: Philippe
Institution: UCA
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We report on the impact of structural defects on mid-infrared intersubband (ISB) properties of GaN/(Al, Ga)N heterostructures grown by ammonia molecular beam epitaxy (NH 3 MBE). Twenty-period GaN/(Al, Ga)N multi-quantum-well (MQW) heterostructures are grown on co-loaded a-plane freestanding GaN substrates and heteroepitaxial a-plane GaN on...
International audience
GaN-Al0.5NGa0.5N quantum dots deposited on (11-22) planes have been grown by combining Molecular Beam Epitaxy and Metal Organic Vapour Phase Epitaxy. This combination is interesting for realization of ultraviolet operation light emitting diodes, lasers andsingle photon sources,… (1,3) The growth of dots was achieved by MBE using ammonia as...
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The ideal single-photon source displaying high brightness and purity, emission on-demand, mature integration, practical communication wavelength (i.e., in the telecom range), and operating at room temperature does not exist yet. In 2018, a new single-photon source was discovered in gallium nitride (GaN) showing high potential thanks to its...
International audience
International audience
Securing optical information to avoid counterfeiting and manipulation by unauthorized persons and agencies requires innovation and enhancement of security beyond basic intensity encryption. In this paper, we present a new method for polarization-dependent optical encryption that relies on extremely high resolution near-field phase encoding at...