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Last name: DE MIERRY
First name: Philippe
Institution: UCA
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We report on the impact of structural defects on mid-infrared intersubband (ISB) properties of GaN/(Al, Ga)N heterostructures grown by ammonia molecular beam epitaxy (NH 3 MBE). Twenty-period GaN/(Al, Ga)N multi-quantum-well (MQW) heterostructures are grown on co-loaded a-plane freestanding GaN substrates and heteroepitaxial a-plane GaN on...
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GaN-Al0.5NGa0.5N quantum dots deposited on (11-22) planes have been grown by combining Molecular Beam Epitaxy and Metal Organic Vapour Phase Epitaxy. This combination is interesting for realization of ultraviolet operation light emitting diodes, lasers andsingle photon sources,… (1,3) The growth of dots was achieved by MBE using ammonia as...
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International audience
The ideal single-photon source displaying high brightness and purity, emission on-demand, mature integration, practical communication wavelength (i.e., in the telecom range), and operating at room temperature does not exist yet. In 2018, a new single-photon source was discovered in gallium nitride (GaN) showing high potential thanks to its...
International audience
International audience
Securing optical information to avoid counterfeiting and manipulation by unauthorized persons and agencies requires innovation and enhancement of security beyond basic intensity encryption. In this paper, we present a new method for polarization-dependent optical encryption that relies on extremely high resolution near-field phase encoding at...
Controlling light properties with diffractive planar elements requires full-polarization channels and accurate reconstruction of optical signal for real applications. Here, we present a general method that enables wavefront shaping with arbitrary output polarization by encoding both phase and polarization information into pixelated...
The paper explores the Deep Level Transient Fourier Spectroscopy (DLTFS) capabilities in characterizing electrically active traps in vertical GaN-on-GaN Schottky barrier diodes (SBDs). The capacitance-DLTFS (C-DLTFS) experiments reveal a prominent electron trap T2 at EC-0.56 eV with a density (NT2) of 8×10 14 cm-3 and a weak presence of another...
We investigated the electrical and optical performances of semipolar (11-22) InGaN green µLEDs with a size ranging from 20 × 20 µm 2 to 100 × 100 µm 2 , grown on a low defect density and large area (11-22) GaN template on patterned sapphire substrate. Atom probe tomography (APT) gave insights on quantum wells (QWs) thickness and indium...
In this work, the physical and the electrical properties of vertical GaN Schottky diodes were investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, and current-voltage (I-V) measurements were performed to better understand the effects of physical parameters, for example structural defects and doping level inhomogeneity, on...
Nanopendeo-epitaxy of gallium nitride (GaN) is considered in this study as a way of producing freestanding GaN with reduced strain and threading dislocation density (TDD) for optoelectronic applications. The novelty of this work lies in the use of silicon on insulator (SOI) substrates patterned into nano-pillars down to the buried oxide (BOX)....
N-doped homo-epitaxial GaN samples grown on freestanding GaN substrates have been investigated by micro-Raman spectroscopy. Quantitative analysis of the Eh2 and the A1(LO) modes' behavior has been performed while intentionally increasing the carrier density using silicon doping. We noticed that as the carrier concentration increases up to 1.8 ×...