This paper reports on the fabrication and characterization of AlGaN/GaN HEMTs transfered onto two different adhesive flexible tapes. Technological improvements were made during the study concerning thermal conductivity of the tapes as well as the transfer process. In this paper, it is shown that the device transferred onto the tape with higher...
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April 2017 (v1)Journal articleUploaded on: December 4, 2022
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May 2016 (v1)Journal article
This letter reports on the first demonstration of microwave power performance at 10 GHz on flexible AlGaN/GaN high-electron-mobility transistor (HEMT). A maximum dc current density of 620 mA/mm at V-GS = 0 V and a peak extrinsic transconductance of 293 mS/mm are obtained for a 2 x 50 x 0.1 mu m(2) flexible device. At V-DS = 5 V, a...
Uploaded on: December 4, 2022 -
October 6, 2014 (v1)Conference paper
This paper reports on the kink effect observed in InAlN/GaN high electron mobility transistors. Electrical characterizations were carried out to point out the influence of this phenomenon on transistor behaviour. It is demonstrated that the kink effect is directly correlated to shallow traps located under the conduction band. A model is...
Uploaded on: December 4, 2022 -
August 1, 2016 (v1)Journal article
The role that the mother substrate plays to influence the performance of InGaN/GaN-based light-emitting diodes (LEDs) onto the adhesive flexible tapes is addressed in this letter. For this purpose, the electroluminescent (EL) spectra and current density-voltage (J-V) characteristics of flexi-LEDs are studied under different convex bending...
Uploaded on: December 4, 2022 -
April 2015 (v1)Journal article
This letter reports on the demonstration of microwave power performance at 40 GHz on AlGaN/GaN high-electron mobility transistor grown on silicon (111) substrate by molecular beam epitaxy. A maximum dc current density of 1.1 A.mm(-1) and a peak extrinsic transconductance of 374 mS.mm(-1) are obtained for 75-nm gate length device. At V-DS = 25...
Uploaded on: December 4, 2022 -
March 2017 (v1)Journal article
The performance of gallium nitride transistors is still limited by technological problems often related to defects and traps. In this work, virgin AlGaN/AlN/GaN HEMTs exhibiting an anomalous DC behavior accompanied by frequency dispersion in the microwave range, both in the transconductance and output conductance, are analyzed. This anomalous...
Uploaded on: December 4, 2022 -
May 14, 2018 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
October 3, 2016 (v1)Conference paper
The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of traps in the GaN channel and the ohmic contacts....
Uploaded on: December 4, 2022 -
2013 (v1)Conference paper
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Uploaded on: November 25, 2023 -
2014 (v1)Journal article
In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based structures on silicon can then be regrown with...
Uploaded on: December 3, 2022 -
2014 (v1)Journal article
In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based structures on silicon can then be regrown with...
Uploaded on: October 11, 2023 -
2013 (v1)Conference paper
From the characterization of structure equivalent loss tangent under different conditions (bias and temperature) obtained through propagation constant and characteristic impedance extraction of CPW line, we propose a coherent analysis of the properties of an AlN/Si interface featured with a GaN on Si HEMT technology.
Uploaded on: December 2, 2022