BEAUMONT , B.

Highly resistive GaN (>1E+8 Ω#) is grown by MOVPE on sapphire with dislocation density in the range 1E+8 to 8E+8 /cm², using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm²/V/s at n_s∼7.6E+12 /cm². Good DC and RF small signal behaviour could be obtained in HEMTs processed on...

Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 °C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current–voltage measurements. It was obtained that annealing resulted in...

International audience

International audience

We report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high-electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 µs to 400 ns is found to be significant at room...

International audience

In this work, AlGaN/GaN high electron mobility transistors have been grown by ammonia source molecular beam epitaxy (MBE) on silicon (1 1 1), silicon carbide and GaN templates on sapphire. The structural and electrical properties of these layers have been studied in order to determine the impact of substrate choice and buffer layer on active...