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Last name: FEUILLET
First name: Guy
International audience
International audience
Abstract It is shown that substrate pixelisation before epitaxial growth can significantly impact the emission color of semiconductor heterostructures. The wavelength emission from In x Ga 1−x N/GaN quantum wells can be shifted from blue to yellow simply by reducing the mesa size from 90 × 90 µm 2 to 10 × 10 µm 2 of the patterned silicon used...
International audience
International audience
International audience
In this paper, we report the use of three pendeo-epitaxy growth approaches as a way of reducing the threading dislocation density (TDD) of 20 × 20 μm$^2$ GaN platelets to be used for the development of micro light-emitting diodes (μLEDs). The method relies on the coalescence of GaN crystallites grown on top of a network of deformable pillars...
National audience
In the first part of this paper, we present a model that explains and determines quantitatively the twists between nucleation islands in the case of a Volmer–Weber heteroepitaxial growth of tetrahedrally coordinated semiconductors along hexagonal orientations. These twists are caused by the network of the screw components of the 60° misfit...
International audience
Nanopatterning of GaN/AlN layers on Silicon-On-Insulator (SOI) substrates is discussed with the aim of fabricating nanopillar arrays that can be used for subsequent GaN pendeo-epitaxy. The principle of the developed epitaxy process is that GaN crystallites are grown on deformable nano-pedestals able to rotate at GaN growth temperature. The...
Nanopatterning of GaN/AlN layers on Silicon-On-Insulator (SOI) substrates is discussed with the aim of fabricating nanopillar arrays that can be used for subsequent GaN pendeo-epitaxy. The principle of the developed epitaxy process is that GaN crystallites are grown on deformable nano-pedestals able to rotate at GaN growth temperature. The...
Nanopendeo-epitaxy of gallium nitride (GaN) is considered in this study as a way of producing freestanding GaN with reduced strain and threading dislocation density (TDD) for optoelectronic applications. The novelty of this work lies in the use of silicon on insulator (SOI) substrates patterned into nano-pillars down to the buried oxide (BOX)....
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