MOREL , Aurélien

Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dynamics of two dimensional "pseudo-donor–acceptor pairs".

We have grown GaN films and GaN–AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides.

We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8

Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is...