Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy
Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD
Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers
Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy
Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN
Electrical transport (resistivity and Hall Effect) have been studied in silicon doped aluminum nitride (AlN) thick epitaxial layers from 250 K up to 1000 K. The investigated samples, grown by molecular beam epitaxy were characterized by n-type conduction with an ambient temperature free carrier concentration of about ~ 1 x 10^15 cm^3. The donor...