The 3C-SiC heteroepitaxial layers, voluntary doped with nitrogen, were grown by hot-wall chemical vapor deposition (CVD) on (111) and (10 0) oriented silicon substrates. The dependence of dopant incorporation on nitrogen flow rate, C/Si ratio, growth rate, growth temperature and reactor pressure has been investigated. The site competition...
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2008 (v1)Journal articleUploaded on: December 4, 2022
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July 18, 2014 (v1)Journal article
We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from T=1.7 K up to room temperature. The MR exhibits a maximum in the temperature range 120–240 K. The maximum is observed at intermediate magnetic...
Uploaded on: December 4, 2022 -
April 17, 2016 (v1)Conference paper
International audience
Uploaded on: February 27, 2023 -
2012 (v1)Journal article
An epitaxial layer of graphene was grown on a pre patterned 6H-SiC(0001) crystal. The graphene smoothly covers the hexagonal nano-holes in the substrate without the introduction of small angle grain boundaries or dislocations. This is achieved by an elastic deformation of the graphene by ~0.3% in accordance to its large elastic strain limit....
Uploaded on: February 28, 2023 -
January 2014 (v1)Conference paper
Single atomic layers of graphene show intriguing electronic and transport properties, and in the last few years they have been in the focus of interest for two-dimensional electron devices with high electron mobilities. Although the classical way to produce graphene is by exfoliation from a graphite crystal, supported graphene layers can also...
Uploaded on: December 4, 2022 -
July 7, 2019 (v1)Conference paper
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Uploaded on: March 25, 2023 -
February 17, 2014 (v1)Journal article
While the integration of graphene on semiconductor surfaces is important to develop new applications, epitaxial graphene has only been integrated on SiC substrates or 3C-SiC/Si templates. In this work, we explore the possibility of growing graphene on AlN/Si(111) templates. Using a chemical vapor deposition process with propane as the carbon...
Uploaded on: March 26, 2023 -
2011 (v1)Journal article
Graphene ranks highly as a promising material for future nanoelectronic devices because of its exceptional electron-transport properties. It appears as a material of choice for high-frequency applications. We report the growth and structure of epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers using low-energy electron microscopy....
Uploaded on: December 3, 2022 -
2010 (v1)Journal article
Epitaxial graphene films grown on silicon carbide SiC substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC 111 /Si 111 substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were...
Uploaded on: December 3, 2022 -
2012 (v1)Conference paperStructural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)
We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead...
Uploaded on: December 4, 2022 -
2015 (v1)Journal article
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10(-9) in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher...
Uploaded on: December 4, 2022 -
September 19, 2022 (v1)Conference paper
International audience
Uploaded on: March 25, 2023