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December 2004 (v1)Journal articleUploaded on: December 4, 2022
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June 5, 2006 (v1)Journal article
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Uploaded on: December 4, 2022 -
2004 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
2005 (v1)Journal article
This paper presents a new 3D methodology to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los Alamos neutron facility on 90, 130, and 250 nm SRAMs and compared to Monte-Carlo simulations. A discussion on ions inducing MBUs is also proposed.
Uploaded on: February 22, 2023 -
2005 (v1)Journal article
This paper presents a new 3D methodology to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los Alamos neutron facility on 90, 130, and 250 nm SRAMs and compared to Monte-Carlo simulations. A discussion on ions inducing MBUs is also proposed.
Uploaded on: December 4, 2022 -
2006 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
2005 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
2005 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
2006 (v1)Journal article
The aim of this work is to validate experimentally the results of the Monte Carlo Recoil Energy Determination (MC-RED) nuclear physics code used to determine the deposited energy in a silicon volume taking into account the probabilistic approach of the physical phenomenon. A silicon sensor has been used to measure the deposited energy spectrum...
Uploaded on: December 4, 2022 -
2005 (v1)Journal article
This paper investigates the sensitivity of SOI and Bulk SRAMs to neutron irradiations with energies from 14 to 500 MeV. The technology sensitivity is analyzed with both experiments and Monte Carlo simulations. In particular, simulations include the nuclear interactions of neutrons with both silicon and oxygen nuclei (n-Si and n-O), in order to...
Uploaded on: December 4, 2022 -
2005 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
2005 (v1)Journal article
A reliable criterion for SEU occurrence simulation is presented. It expresses the relationship existing at threshold between the magnitude and duration of the ion-induced parasitic pulse. This criterion can be obtained byboth three-dimensional device and SPICE simulations. Using this criterion, the simulated and experimental SER on 130 and 250...
Uploaded on: December 4, 2022