International audience
-
November 1, 2020 (v1)Journal articleUploaded on: December 3, 2022
-
October 2015 (v1)Journal article
International audience
Uploaded on: December 4, 2022 -
March 2017 (v1)Journal article
AlN thin films, grown on (0001) sapphire substrates by molecular beam epitaxy (MBE), were annealed at high temperature (up to 1650 °C) in flowing N2. X-ray diffraction (XRD) studies, combined with Williamson-Hall and Srikant plots, have shown that annealing leads to a strong reduction of both edge and mixed threading dislocation densities, as...
Uploaded on: December 3, 2022 -
2009 (v1)Journal article
The in-plane polarities of GaN and ZnO non-polar films deposited on r - and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to the wurztite c-direction is polar in the first case and nonpolar in the second case. Furthermore, on r-sapphire where GaN and...
Uploaded on: December 4, 2022 -
December 2012 (v1)Journal article
The microstructure of nonpolar heteroepitaxial wurtzite films (GaN and ZnO-based) is dominated by the presence of planar basal stacking faults (BSFs). In this paper, transmission electron microscopy studies of both GaN and ZnO nonpolar films oriented either (11–20) or (1–100) and grown on sapphire substrates, permit to propose and evaluate...
Uploaded on: December 3, 2022 -
July 30, 2024 (v1)Journal article
International audience
Uploaded on: August 11, 2024 -
December 2, 2022 (v1)Journal article
In this study, AlN epilayers were grown by ammonia-assisted molecular beam epitaxy on 3 nm h-BN grown on c-sapphire substrates. Their structural properties were investigated by comparing as-grown and postgrowth annealed layers. The role of annealing on the crystalline quality and surface morphology was studied as a function of AlN thickness and...
Uploaded on: October 13, 2023 -
November 2022 (v1)Journal article
(111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated. For film thicknesses below 300 nm, the 3C-SiC material deposited on 2H-AlN/Si presented a better structural...
Uploaded on: October 15, 2023 -
June 23, 2023 (v1)Journal article
In this paper, we report the use of three pendeo-epitaxy growth approaches as a way of reducing the threading dislocation density (TDD) of 20 × 20 μm$^2$ GaN platelets to be used for the development of micro light-emitting diodes (μLEDs). The method relies on the coalescence of GaN crystallites grown on top of a network of deformable pillars...
Uploaded on: November 30, 2023 -
July 3, 2023 (v1)Conference paper
National audience
Uploaded on: October 11, 2023 -
October 28, 2022 (v1)Journal article
In the first part of this paper, we present a model that explains and determines quantitatively the twists between nucleation islands in the case of a Volmer–Weber heteroepitaxial growth of tetrahedrally coordinated semiconductors along hexagonal orientations. These twists are caused by the network of the screw components of the 60° misfit...
Uploaded on: February 22, 2023 -
September 1, 2022 (v1)Journal article
In the present study, the selective sublimation of the p-GaN cap layer of Al(Ga)N/GaN HEMTs is developed to replace the commonly used dry etching with no risk of damage in the barrier layer in order to fabricate enhanced mode transistors. Thanks to this approach, enhancement-mode transistors are fabricated with a threshold voltage between 0 V...
Uploaded on: December 3, 2022 -
2013 (v1)Conference paper
No description
Uploaded on: November 25, 2023 -
2014 (v1)Journal article
In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based structures on silicon can then be regrown with...
Uploaded on: December 3, 2022 -
2014 (v1)Journal article
In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based structures on silicon can then be regrown with...
Uploaded on: October 11, 2023