AlN thin films, grown on (0001) sapphire substrates by molecular beam epitaxy (MBE), were annealed at high temperature (up to 1650 °C) in flowing N2. X-ray diffraction (XRD) studies, combined with Williamson-Hall and Srikant plots, have shown that annealing leads to a strong reduction of both edge and mixed threading dislocation densities, as...
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March 2017 (v1)Journal articleUploaded on: December 3, 2022
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July 17, 2013 (v1)Conference paper
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April 3, 2023 (v1)Journal article
We build new material descriptors to predict the band gap and the work function of 2D materials by tree-based machine-learning models. The descriptor's construction is based on vectorizing property matrices and on empirical property function, leading to mixing features that require low-resource computations. Combined with database-based...
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June 3, 2019 (v1)Journal article
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February 9, 2023 (v1)Journal article
Abstract By combining non-contact atomic force microscopy (nc-AFM) and Kelvin probe microscopy (KPFM) in ultra high vacuum environment (UHV), we directly measure the height and work function of graphene monolayer on the Si-face of 6H-SiC(0001) with a precision that allows us to differentiate three different types of graphene structures : zero...
Uploaded on: February 22, 2023 -
September 2016 (v1)Conference paper
Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers
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September 2014 (v1)Conference paper
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2018 (v1)Journal article
Chemical vapor deposition (CVD) with hydrogen is an interesting technique to grow graphene on silicon carbide (SiC) with excellent electronic properties. However, unanswered questions remain concerning whether the growth mechanism is similar or different to the graphene growth by silicon (Si) sublimation from SiC. In this paper, we emphasize...
Uploaded on: December 4, 2022 -
June 13, 2013 (v1)Conference paper
Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
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December 2, 2022 (v1)Journal article
In this study, AlN epilayers were grown by ammonia-assisted molecular beam epitaxy on 3 nm h-BN grown on c-sapphire substrates. Their structural properties were investigated by comparing as-grown and postgrowth annealed layers. The role of annealing on the crystalline quality and surface morphology was studied as a function of AlN thickness and...
Uploaded on: October 13, 2023 -
October 2, 2015 (v1)Conference paper
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2018 (v1)Journal article
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May 2017 (v1)Journal article
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April 2023 (v1)Journal article
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November 2022 (v1)Journal article
(111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated. For film thicknesses below 300 nm, the 3C-SiC material deposited on 2H-AlN/Si presented a better structural...
Uploaded on: October 15, 2023 -
May 28, 2021 (v1)Journal article
Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer scale epitaxy of Gr remains challenging, hampering applications in microelectronics. With this study we shed light on the generic mechanism which produces the...
Uploaded on: December 4, 2022 -
November 26, 2019 (v1)Journal article
The electronic properties of the graphene (Gr) Schottky junction with an Al 0.22 Ga 0.78 N/GaN heterostructure on silicon have been investigated, both experimentally and using ab-initio DFT calculations. A peculiar high n-type doping (1.1×10 13 cm-2), observed for Gr in contact with AlGaN, was explained by the combined effect of Fermi level...
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September 2, 2012 (v1)Conference paper
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2023 (v1)Journal article
The integration of two-dimensional MoS2 with GaN recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial GaN templates on sapphire substrates, whereas the growth of MoS2 on low-dislocation-density bulk GaN can be strategic for the...
Uploaded on: November 25, 2023 -
July 2019 (v1)Journal article
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Uploaded on: December 4, 2022