NÚÑEZ MARTÍNEZ , Juan

In this paper, five projected tunnel FET (TFET) technologies are evaluated and compared with MOSFET and FinFET transistors for high-performance low-power objectives. The scope of this benchmarking exercise is broader than that of previous studies in that it seeks solutions to different identified limitations. The power and the energy of the...

Many emerging devices are currently being explored as potential alternatives to complementary metal–oxide–semiconductor technologies for overcoming power density and energy efficiency limitations. It is now generally accepted that these emerging devices need to be evaluated at the circuit level. In this paper, we investigate the speed and power...

Tunnel transistors are one of the most attractive steep subthreshold slope devices currently being investigated as a means of overcoming the power density and energy inefficiency limitations of CMOS technology. In this paper, the evaluation and the comparison of the performance of distinct fan-in logic gates, using a set of widely accepted...

Tunnel transistors are one of the most attractive steep subthreshold slope devices which are being investigating to overcome power density and energy inefficiency exhibited by CMOS technology. These transistors exhibit asymmetric conduction which can cause sustained noise voltage pulses (bootstrapping) within digital TFETs circuits leading to...

RF to DC passive rectifiers can benefit from the superior performance at low voltage of tunnel transistors. They have shown higher power conversion efficiency (PCE) at low input power than Si FinFETs counterparts. In this paper, we analyze the limitations of typical TFET rectifier topologies associated with the forward biasing of their...

Tunnel transistors are one of the most attractive steep subthreshold slope devices which are being investigated to overcome power density and energy inefficiency exhibited by CMOS technology. There are design challenges associated to their distinguishing characteristic which are being addressed. In this paper the impact of the non-symmetric...

Tunnel transistors are steep subthreshold slope devices suitable for low voltage operation so being potential candidates to overcome the power density and energy inefficiency limitations of CMOS technology, which are critical for IoT development. Although they show higher ON currents than CMOS at low supply voltages, currently TFETs do not...

Tunnel transistors are one of the most attractive steep subthreshold slope devices currently being investigated as a means of overcoming the power density and energy inefficiency limitations of CMOS technology. In this paper, projected tunnel transistor technologies are evaluated and compared to LP and HP versions of both conventional and...

Devices combining transistors and phase transition materials are being investigated to obtain steep switching and a boost in the ION/IOFF ratio and, thus, to solve power and energy limitations of CMOS technologies. This paper analyzes the operation of circuits built with these devices. In particular, we use a recently projected device called...

Tunnel field-effect transistors (TFETs) are one of the most attractive steep subthreshold slope devices currently being investigated as a means of overcoming the power density and energy inefficiency limitations of Complementary Metal Oxide Semiconductor (CMOS) technology. In this paper, we analyze the relationship between devices and register...

Hybrid-phase-transition FETs (HyperFETs), built by connecting a phase transition material (PTM) to the source terminal of a FET, are able to increase the ON-to- OFF current ratio. In this article, we describe a comprehensive study carried out to explore the potential of these devices for low-power and energy-limited logic applications....

Transistors incorporating phase change materials (Phase Change FETs) are being investigated to obtain steep switching and a boost in the I ON /I OFF ratio and, thus, to solve power and energy limitations of CMOS technologies. In addition to the replacement of the transistors in conventional static CMOS logic circuits, the distinguishing...

Multiple-valued Logic (MVL) circuits are one of the most attractive applications of the Monostable-to-Multistable transition Logic (MML), and they are on the basis of advanced circuits for communications. The operation of such quantizer has two steps: sampling and holding. Once the quantizer samples the signal, it must maintain the sampled...

MOBILE networks can be operated in a gate-level pipelined fashion allowing high through-output. If MOBILE gates are directly chained, a four-phase clock scheme is required for this. A single-phase scheme is possible adding latches to the MOBILE gates. Proposed and experimentally validated is a new single-phase interconnection scheme that...

The behavior of a circuit able to implement frequency division is studied. It is composed of a block with an IV characteristic exhibiting Negative Differential Resistance (NDR) built from MOS transistors plus an inductor and a resistor. Frequency division is obtained from the period adding sequences which appear in its bifurcation diagram. The...

Monostable to Bistable (MOBILE) gates are very suitable for the implementation of gate-level pipelines which can be achieved without resorting to memory elements. MOBILE operating principle is implemented using two series connected Negative Differential Resistance (NDR) devices with a clocked bias. This paper describes and experimentally...

MOnostable-BIstable Logic Element (MOBILE) networks can be operated in a gate-level pipelined fashion (nanopipeline) allowing high through output. Resonant tunneling diode (RTD)-based MOBILE nanopipelined circuits have been reported using different clock schemes including a four-phase strategy and a single-phase clock scheme. In particular,...

Domino dynamic circuits are widely used in critical parts of high performance systems. In this paper we show that, in addition to the functional limitation associated to the noninverting behavior of Domino gates, there are also robustness disadvantages when compared to inverting dynamic gates. We analyze and compare the tolerance to parameter...

The incorporation of Resonant Tunnel Diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance: higher circuit speed, reduced component count, and/or lowered power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some works have...

Domino dynamic circuits are widely used in critical parts of high performance systems. In this paper we show that in addition to the functional limitation associated to the noninverting behavior of domino gates, there are also performance disadvantages when compared to inverting dynamic gates, which can be related to this feature. These...

La existencia de dispositivos con una característica I-V que exhibe una resistencia diferencial negativa (Negative Differential Resistance, NDR) resulta atractiva desde el punto de vista del diseño de circuitos, como ha sido demostrado por los circuitos que usan diodos basados en el efecto túnel resonante (Resonant Tunneling Diodes, RTDs)....

Nano-oscillators based on phase transitions materials (PTM) are being explored for the implementation of different non-conventional computing paradigms. This article describes the capability of such autonomous non-linear oscillators to store phase-encoded information. A latch based in sub-harmonic injection locking using an oscillator composed...