The semi-on-state reliability of normally-off AlGaN/GaN high electron mobility transistor fabricated by fluorine ion plasma implantation technology is reported, focusing on an advanced dc step-stress methodology. By inserting a non-stressful fixed-bias step between each stress step, a reliable in-situ monitoring of gate and drain current...
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January 11, 2021 (v1)Conference paperUploaded on: December 4, 2022
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2018 (v1)Journal article
Despite the fact that a lower growth temperature is generally considered as a drawback for achieving high crystal quality, the necessity to reduce the nucleation temperature of AlN on Silicon has permitted Molecular Beam Epitaxy (MBE) to demonstrate high performance for GaN transistors operating at high frequency. Compared to Metal-Organic...
Uploaded on: May 18, 2023 -
June 17, 2019 (v1)Conference paper
International audience
Uploaded on: March 25, 2023 -
June 14, 2021 (v1)Conference paper
The onset and pinch-off voltages shift of lateral GaN field-effect rectifier diodes (L-FER) and normally-off HEMTs are studied. It is shown that a short duration of low power SF6 plasma followed by a low temperature annealing permits to get an effective and stabilized fluorine ion implantation in the AlGaN barrier, contributing to reduce the...
Uploaded on: December 4, 2022 -
November 2021 (v1)Journal article
Fluorine ion migration in normally-off AlN/GaN HEMTs fabricated by fluorine ion plasma implantation technology is evidenced. Devices under test are co-integrated into the OMMIC commercial D006GH/D01GH MMIC process, providing fluorine-free normally-on HEMTs. Gate reverse bias step-stress experiment at a drain fixed voltage of 0 V, carried out as...
Uploaded on: December 3, 2022 -
March 21, 2018 (v1)Conference paper
National audience
Uploaded on: February 11, 2024 -
April 2017 (v1)Journal article
This paper reports on the fabrication and characterization of AlGaN/GaN HEMTs transfered onto two different adhesive flexible tapes. Technological improvements were made during the study concerning thermal conductivity of the tapes as well as the transfer process. In this paper, it is shown that the device transferred onto the tape with higher...
Uploaded on: December 4, 2022 -
May 2020 (v1)Journal article
Transfer technology is now becoming very attractive not only for new technologies such as flexible technology but also for solid state technologies when performances are limited by technological barriers that have to be overcome. In this last context, the transfer of high electron mobility transistors (HEMTs) on diamond substrates represents an...
Uploaded on: December 4, 2022 -
July 7, 2019 (v1)Conference paper
International audience
Uploaded on: March 25, 2023 -
December 1, 2019 (v1)Journal article
In this letter, a record performance at 40 GHz obtained on AlGaN/GaN high electron mobility transistor (HEMT) grown on Hydride Vapor Phase Epitaxy (HVPE) Free-Standing GaN substrate is reported. An output power density of 2 W.mm-1 associated with 20.5 % power added efficiency and a linear power gain (Gp) of 4.2 dB is demonstrated for 70 nm gate...
Uploaded on: December 4, 2022 -
2018 (v1)Journal article
Blue (Ga,In)N-based light-emitting diodes (LEDs) grown on a Si(111) substrate by metal-organic vapor phase epitaxy are transferred on a flexible tape after the Si substrate removal. Their optical and thermal behaviors are measured and compared to those of regular LEDs on Si. The light output power of the flexible LEDs is increased due to a...
Uploaded on: December 4, 2022 -
May 2016 (v1)Journal article
This letter reports on the first demonstration of microwave power performance at 10 GHz on flexible AlGaN/GaN high-electron-mobility transistor (HEMT). A maximum dc current density of 620 mA/mm at V-GS = 0 V and a peak extrinsic transconductance of 293 mS/mm are obtained for a 2 x 50 x 0.1 mu m(2) flexible device. At V-DS = 5 V, a...
Uploaded on: December 4, 2022 -
2013 (v1)Conference paper
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Uploaded on: October 11, 2023 -
October 6, 2014 (v1)Conference paper
This paper reports on the kink effect observed in InAlN/GaN high electron mobility transistors. Electrical characterizations were carried out to point out the influence of this phenomenon on transistor behaviour. It is demonstrated that the kink effect is directly correlated to shallow traps located under the conduction band. A model is...
Uploaded on: December 4, 2022 -
2013 (v1)Conference paper
No description
Uploaded on: December 3, 2022 -
2013 (v1)Conference paper
No description
Uploaded on: December 3, 2022 -
2013 (v1)Conference paper
No description
Uploaded on: October 11, 2023 -
August 1, 2016 (v1)Journal article
The role that the mother substrate plays to influence the performance of InGaN/GaN-based light-emitting diodes (LEDs) onto the adhesive flexible tapes is addressed in this letter. For this purpose, the electroluminescent (EL) spectra and current density-voltage (J-V) characteristics of flexi-LEDs are studied under different convex bending...
Uploaded on: December 4, 2022 -
April 2015 (v1)Journal article
This letter reports on the demonstration of microwave power performance at 40 GHz on AlGaN/GaN high-electron mobility transistor grown on silicon (111) substrate by molecular beam epitaxy. A maximum dc current density of 1.1 A.mm(-1) and a peak extrinsic transconductance of 374 mS.mm(-1) are obtained for 75-nm gate length device. At V-DS = 25...
Uploaded on: December 4, 2022 -
May 31, 2022 (v1)Journal article
In this work, an AlGaN/GaN HEMT structure is grown on a 0.8 μm thick 3C-SiC layer on high resistivity Silicon substrate. The RF propagation losses are investigated and compared with the ones of epi-layers grown directly on Silicon and on 6H-SiC substrates. Short gate length transistors are fabricated using e-beam lithography. In spite of ohmic...
Uploaded on: December 3, 2022 -
June 17, 2019 (v1)Conference paper
Herein, the interest of cubic silicon carbide as a template for the growth of AlGaN/ GaN high electron mobility transistor (HEMT) heterostructures on silicon substrates for high-frequency operation is shown. On the one hand, 0.6-0.8 μm-thick 3C-SiC grown by chemical vapor deposition on intrinsic silicon substrate having initial resistivity...
Uploaded on: March 25, 2023 -
October 24, 2021 (v1)Conference paper
International audience
Uploaded on: March 25, 2023 -
April 2020 (v1)Journal article
Herein, the interest of cubic silicon carbide as a template for the growth of AlGaN/ GaN high electron mobility transistor (HEMT) heterostructures on silicon substrates for high-frequency operation is shown. On the one hand, 0.6-0.8 μm-thick 3C-SiC grown by chemical vapor deposition on intrinsic silicon substrate having initial resistivity...
Uploaded on: December 4, 2022 -
June 14, 2021 (v1)Conference paper
This work aims to understand the origin of propagation losses in GaN-on-Si devices at microwave frequencies thanks to original AFM's electrical modes such as scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). AlN films on Si substrate were grown using Metalorganic Vapor Phase Epitaxy (MOVPE) technique....
Uploaded on: December 4, 2022 -
2021 (v1)Journal article
This paper reports on the fabrication of an enhancement-mode AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistor with a new barrier epi-layer design based on double Al 0.2 Ga 0.8 N barrier layers separated by a thin GaN layer. Normally-off transistors are achieved with good performances by using digital etching (DE)...
Uploaded on: December 4, 2022